Hello, readers welcome to the new post. Today we will learn Difference between IGBT and SCR. IGBT has a high value of input impedance similar to PMOSFET and has less value of on-state power loss while SCR has broken over volts is greater from the power supply. So SCR needed a high value of pulse for operation
In this post, we will discuss different parameters to find the differences. So let’s get started Difference between IGBT and SCR
Difference between IGBT and SCR
What is SCR
- The full form of SCR is silicon controlled rectifier that is the main part of the thyristors’ family.
- SCR is mostly used more than other types of thyristors like Diac and SCS and TRIAC.
- SCR is created through the use of silicon and common use is to transform the AC current to DC current or can say do the rectification like a diode.
- It is also used in other circuits like power regulation inversion.
- The SCR has features to regulate the large value of current and volts so used in industries
- In some cases, SCR and thyristors are considered as same but SCR is considered the proper subset of thyristor
- SCR is a unidirectional module and can be operated through the use of a positive current at its gate.
- The symbolic representation of SCR is like a diode with a gate pinout.
- It is a unidirectional device that passes the current single direction. It has three pinouts Anode cathode and gate. Gate is used to on and off this module
- SCR consists of 4 layers of semiconductors modules that are configured as NPNP or PNPN configurations that make three junctions J1 J2 and J3
- ANode is a positive pin that is P layers cathode is negative pin so it is N layers gate work as control
How SCR works
- There are three modes of operation for which it works
- Forward Block mode
- Forward conduction mode
- Reverse blocking mode
What is IGBT
- IGBT (Insulated Gate Bipolar Transistor), which provides conduction characteristics like a bipolar transistor and voltage control like a MOSFET.
- Used in high voltage, fast switching applications. There are three main terminals of IGBT gate, collector and emitter.
- The figure below shows a symbolic representation of an IGBT.
You can see that it is like a BJT symbol with a special bar that indicated the gate structure of the MOSFET, rather than the base as we discussed above, the combination of a MOSFET and a BJT.
IGBT input characteristics are like MOSFET and output like BJT. Bipolar transistors are capable of conducting a large current than a field effect transistor, but due to the isolated gate, there is no gate current for the MOSFET.
The saturation voltage of the MOSFET is less than that of the IGBT and is similar to that of the bipolar transistor.
The insulated-gate bipolar transistor has some advantages over the MOSFET in that it can carry large collector-emitter voltages of more than two hundred volts and has a smaller saturation voltage when they are on.
Similarly, IGBT has some advantages over BJT such as high switching speed.
If we compare the switching speed, then MOSFET has the highest switching speed, IGBT is second and BJT is third.
- These are some advantages of IGBT.
- It simple circuit is simple.
- It provides less on resistance.
- It has a large voltage capability.
- It switching speed is fast.
- It is easy to handle.
- It has less on power dissipation.
- Its input impedance is high.
- It regulates voltage.
- It can be easily on and off.
- These are some disadvantages of IGBT.
- It has to latch-up problems.
- It does not resist high reverse voltage.
- It has a large turn-off time.
- Its price is large.
That is all about the Difference between IGBT and SCR all details has explained. If you have any queries ask in the comments. Thanks for reading have a nice day