Hello, readers welcome to the new post. Today we will learn Difference between IGBT and SCR. IGBT has a high value of input impedance similar to PMOSFET and has less value of on-state power loss while SCR has broken over volts is greater from the power supply. So SCR needed a high value of pulse for operation
In this post, we will discuss different parameters to find the differences. So let’s get started Difference between IGBT and SCR
Difference between IGBT and SCR
What is SCR
- The full form of SCR is a silicon-controlled rectifier that is the main part of the thyristors family.
- SCR is mostly used more than other types of thyristors like Diac SCS and TRIAC.
- SCR is created through the use of silicon and common use is to transform the AC to DC or say do the rectification like a diode.
- It is also used in other circuits like power regulation inversion.
- The SCR has features to regulate the large value of current and volts so used in industries
- In some cases, SCR and thyristors are considered as same but SCR is considered the proper subset of thyristor
- SCR is a unidirectional module and can be operated through the use of a positive current at its gate.
SCR Symbol
- The symbolic representation of SCR is like a diode with a gate pinout.
- It is a unidirectional device that passes the current single direction. It has three pinouts Anode cathode and gate. The gate is used to on and off the module
SCR Construction
- SCR consists of 4 layers of semiconductor modules that are configured as NPNP or PNPN configurations that make three junctions J1 J2 and J3
- ANode is a positive pin that is P layers cathode is a negative pin so it is N layers gate works as a control
How SCR works
- There are three modes of operation for which it works
- Forward Block mode
- Forward conduction mode
- Reverse blocking mode
What is IGBT
- The IGBT is called an insulated gate bipolar transistor that is made by mixing the BJT and MOSFET.
- The work Insulated gate is an input component of MOSFET that provides high input impedance. It does not use high input current and works on the voltage provided at the gate pin.
- The bipolar word in the IGBT name defines that the output side of BJT comes with bipolar and current flow is caused by types of charge carriers.
- It comes with 4 layers in combination of PNPN and 3 PN junctions. Its three pins are gate, collector, and emitter. Terminal pins are based on the design of transistors.
- Gate gets input and emitter and collectors are the output of BJT.
- It uses small voltage and current signals
IGBT Advantages
- These are some advantages of IGBT.
- A simple circuit is simple.
- It provides less resistance.
- It has a large voltage capability.
- Its switching speed is fast.
- It is easy to handle.
- It has less power dissipation.
- Its input impedance is high.
- It regulates the voltage.
- It can be easily on and off.
IGBT Disadvantage
- These are some disadvantages of IGBT.
- It has to latch up problems.
- It does not resist high reverse voltage.
- It has a large turn-off time.
- Its price is large.
What is the difference between SCR and IGBT inverter?
- SCR and IGBT come with 3 terminals, SCR has an anode, cathode, and gate and IGBT comes with the base-emitter, gas, and collector. For both devices gate terminals are used for triggering. SCR comes with a single insulation layer and IGBT has 2 insulated silicon layers.
What is the main advantage of IGBT over SCR?
- The basic benefit of IGBT over SCR is self-commutating features. It comes with features for turning on or turned off with use of a lower power signal at 3rd terminals either gate or base.
What is the main difference between an IGBT and MOSFET?
- Slow switching speed for IGBT as compared to MOSFET. It is good to use for applications where switching speed is not the main issue. MOSFET switching speed helps to use for applications where high frequency is used.
Why IGBT is preferred?
- IGBT comes with features that can get high handling voltage and have low on-state voltage for high currents and high temperatures.
Why MOSFET is faster than IGBT?
- MOSFET is the majority carrier device and IGBT has minority carriers. The majority of carriers come with higher mobility and provide high-speed switching speed. IGBT comes with lower switching loss and is effective for high-frequency applications.
What is the frequency of IGBT?
- The common IGBT switching frequency for full bridge and half bridge is 20 to 50 kHz. 30KHZ is the commonly used frequency and the switching frequency for two switch forward methods is 60 kHz and higher
That is all about the Difference between IGBT and SCR all details has explained. If you have any queries ask in the comments. Thanks for reading have a nice day