Difference between pin photodiode and avalanche photodiode

Hello, readers welcome to the new post. We will discuss Difference between pin photodiode and avalanche photodiode. Diode is a device that is used as a rectifier in electronic circuits. The diode has two pins anode and a cathode and consists of P and N regions that make the PN junction.

There are different types of diodes in this post we make a comparison between pin and avalanche diodes and find their differences. So let’s get started.

What is Pin Photodiode

• Pin diode belongs to photodetectors and can transform light signals into electrical signals. It was first time used in 1950 and comes with three layers of structure.

• It has a p region, intrinsic regional, and N layer. Its P and N layers aer largely doped than the normal diode doping. The area of the intrinsic region is larger than the PN junction region
• The working of the PN photodiode is such that the reverse biased volts and charge region cover the intrinsic area of the diode.
• Pairs of electrons and holes are created in the charge area by getting the photon.
• The switching speed of the diode is in inverse relation. The switching speed can be increased by using the minority carriers.
• In the case of photodetector circuits that need good speed of response depletion region area must be as large so a smaller minority will increase.

Avalanche photodiode

• An Avalanche photodiode is different from an avalanche diode and it is a photodetector that can transform a signal in an electric signal.
• The structure of the avalanche photodiode is like the PIN photodiode.  Three regions exist in the PIN photodiode P, intrinsic, and N.

• The difference is that reverse biased volts are high to results for ionization. For the case of silicon, there is one hundred to two hundred volts are needed. First of all electron and hole, pairs are produced through light absorption.
• As a result, more electrons and hole pairs are created due to ionization.
• PIN diodes are used in radio frequency applications that have less value of capacitance. Its switching and change in resistance parameters help to be used for switching and variable attenuator circuits.

Pin Photodiode vs. Avalanche Photodiode

• For the pin diode, there is no high-intensity electric field region, but the avalanche has a high-intensity field region.
• Responsiveness of avalanche diode is high.
• The noise of the avalanche photodiode is higher than the pin photodiode.
• The response time of the pin diode is half that of the avalanche diode.

Advantages and Disadvantages of PIN Photodiode

• The main benefits are that it has a high-frequency response and a larger than cadmium sulfide photodetector.
• It is used for electronic devices since it has a time response in ns and is also less costly.
• It has a high value of spectral response and can process smaller signals.
• Its disadvantage is that it needs a larger reverse bias for an operation that decreases the signal-noise ratio.

How does avalanche photodiode work?

• Avalanche photodiodes work in a reverse-biased state at a voltage close to breakdown volts. There are a high number of electron and hole pairs created for incident phones in the depletion region.

What is meant by avalanche photodiode?

• The avalanche photodiode is a high-sensitive semiconductor photodiode detector that shows a photoelectric effect to transform light into electricity.

Which material is used in the avalanche photodiode?

• The material used in this photodiode is important for the wavelength of light that is absorbed by the component. Silicon-based components are used for the 450nm to 110nm range, while indium gallium arsenide photodiodes are used for high wavelength

PIn Photodiode Application

• It is used for the detection of laser pulses, high-speed switching, and logic circuits since it has the feature of weak strength signal detection.

How does PIN photodiode work?

• It operates through the application of reverse-biased voltages in the space charge area covered through the intrinsic region. Electron hole pairs are produced in the charge area through the absorption of a photon.

Advantages and Disadvantages of Avalanche Photodiode

• It can detect weak signals since it has a high current gain bandwidth.
• Its structure is complex; precautions must be taken across the junction. The junction must be in uniform, and a guard ring is used to protect the diode from edge breakdown.

Avalanche Photodiode Applications

• It is used in fiber optics systems since it has features to measure low signals. The accurately designed silicon avalanche photodiode gives a value of response time of about one nanosecond.

That is all about the Difference between pin photodiode and avalanche photodiode all details has explained if you have any queries ask in the comments. Thanks for reading have a good day.